(Ga,Fe)Sb is a promising magnetic semiconductor (MS) for spintronic applications because its Curie temperature (T_C) is above 300 K when the Fe concentration is higher than 20%. However, the anisotropy constant K_u of (Ga,Fe)Sb is below 7.6 × 10³ erg/cm³ when Fe concentration is lower than 30%, which is one order of magnitude lower than that of (Ga,Mn)As. To address this issue, we grew Ga_1-x-yFe_xNi_ySb films with almost the same x (≈24%) and different y to characterize their magnetic and electrical transport properties. We found that the magnetic anisotropy of Ga_0.76-yFe_0.24Ni_ySb can be enhanced by increasing y, in which K_u is negligible at y = 1.7% but increases to 3.8 × 10⁵ erg/cm³ at y = 6.1% (T_C = 354 K). In addition, the hole mobility (μ) of Ga_1-x-yFe_xNi_ySb reaches 31.3 cm²/(V?s) at x = 23.7%, y = 1.7% (T_C = 319 K), which is much higher than the mobility of Ga_1-xFe_xSb at x = 25.2% (μ = 6.2 cm²/(V?s)). Our results provide useful information for enhancing the magnetic anisotropy and hole mobility of (Ga,Fe)Sb by using Ni co-doping.

Organic–inorganic hybrid perovskite formamidinium lead bromide nanosheet (FAPbBr₃ NS) is regarded as a superior substance used to construct optoelectronic devices. However, its uncontrollable stability seriously affects its application in the field of photodetectors. In this paper, FAPbBr₃ is combined with cadmium sulfide nanobelt (CdS NB) to construct a hybrid device that greatly improves the stability and performance of the photodetector. The response of the FAPbBr₃ NS/CdS NB detector under 490 nm light illumination reaches 5712 A/W, while the response of the FAPbBr₃ photodetector under equivalent conditions is only 25.45 A/W. The photocurrent of the FAPbBr₃ NS/CdS NB photodetector is nearly 80.25% of the initial device after exposure to air for 60 days. The difference in electric field distribution between the single material device and the composite device is simulated by the finite-difference time-domain method. It shows the advantages of composite devices in photoconductive gain and directly promotes the hybrid device performance. This paper presents a new possibility for high stability, fast response photodetectors.

We demonstrate a simultaneous transmission of time-frequency and data over a 160-km urban business network in Shanghai. The signals are transmitted through a cascaded optical link consisting of 48 km and 32 km, which are connected by an optical relay. The metrological signals are inserted into the communication network using dense wavelength division multiplexing. The influence of the interference between different signals has been discussed. The experimental results demonstrate that the radio frequency (RF) instability can reach 2.1×10-14 at 1 s and 2.3×10-17 at 10,000 s, and the time interval transfer of one pulse per second (1 PPS) signal with less than 10 ps at 1 s is obtained. This work paves the way for the widespread dissemination of ultra-stable time and frequency signals over the communication networks.

为了实现夜间低照度图像的增强，提高目标检测模型在夜间低照度条件下的检测精度并减小模型的计算成本，提出了一种基于知识蒸馏和数据增强的夜间低照度图像增强以及目标检测多任务模型，基于高质量图像模型进行知识蒸馏，利用高质量图像的特征信息指导模型训练，从而使模型在夜间低照度图像中提取到与高质量图像类似的特征信息。利用这些特征信息可以实现图像的对比度增强、去噪以及目标检测。实验结果表明，提出的蒸馏方法可以提升16.58%的夜间低照度目标检测精度，且用该方法增强的图像可以达到主流的基于深度学习的图像增强的效果。

中国散裂中子源（CSNS）靶站质子束窗位于环到靶站输运线（RTBT）与靶站交接面，起到隔离加速器高真空和靶站氦气环境的作用。随着束流功率提高，目前质子束窗单层膜结构形式已无法满足CSNS-II 500 kW的高功率需求，因此开展CSNS-II质子束窗研制，设计出双层膜中间通水的冷却结构，完成质子束窗双层膜的薄膜半径、薄膜厚度、水冷槽长度与宽度、对流换热系数等各参数对质子束窗温升与热应力的影响分析。通过冷却水需求分析得出，冷却水流速需大于15 L/min。通过质子束窗主体的流固耦合分析，消除箱体内部死水区域。最终优化后质子束窗薄膜位置最高温度47.8 ℃，薄膜位置最高热应力30.758 MPa。通过FLUKA软件对质子束窗材料的辐照损伤性能进行分析，在每年5000 h工作时长、500 kW高功率束流的辐照下，辐照损伤DPA计算值为1.285 DPA，质子束窗的安全使用寿命在7年以上。

束流准直器作为加速器的关键部件，用于吸收不在预定轨道的束晕粒子。因良好的电导率和良好的准直效率，铜被广泛应用于准直器中作为挡块材料。通常，挡块位于超高真空环境中，承受高功率束流载荷冲击，其不同表面处理工艺直接影响传热性能及放气率。为评估无氧铜表面处理工艺对相关性能的影响，分别对其进行表面化学腐蚀发黑处理、高温氧化处理以及仅机械加工处理，结果表明：无氧铜表面发黑处理后，其热辐射系数明显增加，同时也伴随着放气率的明显增加；而通过高温氧化处理后的铜块，其表面热辐射系数与仅机械加工后的铜块差异不大，放气率有一定程度的增加。以散裂中子源二期项目中的动量准直器为研究对象，在一定的束流载荷作用下，挡块选用发黑无氧铜，可将其最高温度控制在125 ℃以下，同时增加两台离子泵可使该准直器所在区域真空度满足运行要求。

相比于第一代和第二代半导体材料, 第三代半导体材料具有更高的击穿场强、电子饱和速率、热导率以及更宽的带隙, 更适用于制备高频、大功率、抗辐射、耐腐蚀的电子器件、光电子器件和发光器件。氮化镓(GaN)作为第三代半导体材料的代表之一, 是制作蓝绿激光、射频微波器件和电力电子器件的理想衬底材料, 在激光显示、5G通信、相控阵雷达、航空航天等领域具有广阔的应用前景。氢化物气相外延(Hydride vapor phase epitaxy, HVPE)方法因生长设备简单、生长条件温和和生长速度快而成为制备GaN晶体的主流方法。由于普遍使用石英反应器, HVPE法生长获得的非故意掺杂GaN不可避免地存在施主型杂质Si和O, 使其表现出n型半导体特性, 但载流子浓度高和导电率低限制了其在高频大功率器件中的应用。掺杂是改善半导体材料电学性能最普遍的方法, 通过掺杂不同掺杂剂可以获得不同类型的GaN单晶衬底, 提高其电化学特性, 从而满足市场应用的不同需求。本文介绍了GaN半导体晶体材料的基本结构和性质, 综述了近年来采用HVPE法生长高质量GaN晶体的主要研究进展; 对GaN的掺杂特性、掺杂剂类型、生长工艺以及掺杂原子对电学性能的影响进行了详细介绍。最后简述了HVPE法生长掺杂GaN单晶面临的挑战和机遇, 并展望了GaN单晶的未来发展前景。